Datasheet STMicroelectronics STD30PF03 — Datenblatt

STD30PF03LT4
STD30PF03L-1
P-channel 30 V -0.025 Ω -24 A -DPAK / IPAK
STripFET™ II Power MOSFET
Features
Type VDSS RDS(on) max ID STD30PF03LT4 30 V < 0.028 Ω 24 A STD30PF03L-1 30 V < 0.028 Ω 24 A 3
3 ■ Standard outline for easy automated surface
mount assembly ■ Low threshold device ■ Low gate charge 2
1 1 DPAK IPAK Application
■ Switching applications
Figure 1. Description Internal schematic diagram This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance and low gate charge. Table 1. Device summary Order codes Marking Package Packaging STD30PF03LT4 D30PF03L DPAK Tape & reel STD30PF03L-1 D30PF03L IPAK Tube January 2008 Rev 2 1/13
www.st.com 13 Electrical ratings 1 STD30PF03LT4 -STD30PF03L-1 Electrical ratings
Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 V ± 16 V VDS Drain-source voltage (VGS=0) VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C 24 A ID (1) Drain current (continuous) at TC = 100 °C 24 A IDM (2) Drain current (pulsed) 96 A PTOT Total dissipation at TC=25 °C 70 W Derating factor 0.47 W/°C Single pulse avalanche energy 850 mJ -55 to 175 °C 175 °C EAS (3)
Tstg
Tj Storage temperature
Max. operating junction temperature 1. Current limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting TJ = 25 °C, ID = 12 A, VDD =15 V Table 3. Thermal data
Max value Symbol Parameter Unit
DPAK Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max Tl Maximum lead temperature for soldering purpose IPAK …