Datasheet Infineon IRF7389 — Datenblatt

PD -95462 IRF7389PbF
HEXFET® Power MOSFET
l
l
l
l
l
l Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
Lead-Free S1 N-CHANNEL MOSFET
1
8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Top View Description N-Ch P-Ch 30V -30V VDSS RDS(on) 0.029Ω 0.058Ω Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized …