Datasheet Toshiba SSM3H137TU — Datenblatt

SSM3H137TU
MOSFETs Silicon N-Channel MOS SSM3H137TU
1. Applications
• Relay Drivers 2. Features
(1) AEC-Q101 (Rev. D) qualified. (Note 1) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance
: RDS(ON) = 295 mΩ (max) (@VGS = 4.0 V, ID = 0.5 A)
RDS(ON) = 280 mΩ (max) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 240 mΩ (max) (@VGS = 10 V, ID = 1.0 A)
Note 1: For detail information, Please contact to our sales. 3. Packaging and Pin Assignment 1: Gate
2: Source
3: Drain UFM Start of commercial production ©2016 Toshiba Corporation 1 2016-03
2016-03-25
Rev.1.0 SSM3H137TU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics Symbol Rating Unit
V Drain-source voltage VDSS 34 Gate-source voltage VGSS ±20 Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation (t = 1 s) (Note 1) ID 2 (Note 1), (Note 2) IDP 6 (Note 3) PD (Note 3) Channel temperature
Single-pulse avalanche energy (Note 4) A 800 mW 1000
Tch 150 EAS 3.5 mJ Avalanche current IAR 2.0 A Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. …