Datasheet Navitas Semiconductor NV6113 — Datenblatt

NV6113
650 V GaNFast™ Power IC
2. Description QFN 5 x 6 mm This 650 V GaNFast power IC is optimized for high
frequency, soft-switching topologies.
Monolithic integration of FET, drive and logic creates
an easy-to-use ‘digital-in, power-out’ high-performance
powertrain building block, enabling designers to create
the fastest, smallest, most efficient power converters in
the world.
The highest dV/dt immunity, high-speed integrated
drive and industry-standard low-profile, low-inductance,
5 x 6 mm SMT QFN package allow designers to exploit
Navitas GaN technology with simple, quick, dependable
solutions for breakthrough power density and efficiency.
GaNFast power ICs extend the capabilities of
traditional topologies such as flyback, half-bridge,
resonant, etc. to MHz+ and enable the commercial
introduction of breakthrough designs. Simplified schematic 1. Features
GaNFast™ Power IC
• Monolithically-integrated gate drive
• Wide logic input range with hysteresis
• 5 V / 15 V input-compatible
• Wide VCC range (10 to 30 V) …