Datasheet Vishay SiZF300DT-T1-GE3 — Datenblatt

SiZF300DT
www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES PowerPAIR® 3 x 3F TrenchFET® Gen IV power MOSFET
SkyFET® low side MOSFET with integrated Schottky
100 % Rg and UIS tested
Internally connected half-bridge configuration in
3.3 mm-by-3.3 mm footprint
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 •
•
•
• D1
S2 3.3
mm 1 1
2 G
3 S /D 1
4 S /D 1 2
1 2
G2 mm
3.3 Top View APPLICATIONS Bottom View • CPU core power PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 4.5 V …