Datasheet Renesas HAT2169N — Datenblatt

HAT2169N
Silicon N Channel Power MOS FET
Power Switching
Preliminary
Rev.0.01
May.29.2005 Features
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• High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 3.1 mΩ typ. (at VGS = 10 V) Outline
LFPAK-i 5 6 7 8
D D D D 2X
XX 1(S)
2(S)
3(S)
4(G) 4
G 8(D) …