Datasheet IXYS X4351NE — Datenblatt

IX4351NE 9A Low Side
SiC MOSFET & IGBT Driver INTEGRATED CIRCUITS DIVISION
Features Description • Separate 9A peak source and sink outputs
• Operating Voltage Range: -10V to +25V
• Internal charge pump regulator for selectable
negative gate drive bias
• Desaturation detection with soft shutdown sink driver
• TTL and CMOS compatible input
• Under Voltage lockout (UVLO)
• Thermal shutdown
• Open drain FAULT output Applications
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• Driving SiC MOSFETs and IGBTs
On-board charger and DC charging station
Industrial inverters
PFC, AC/DC and DC/DC converters The IX4351NE is designed specifically to drive SiC
MOSFETs and high power IGBTs. Separate 9A
source and sink outputs allow for tailored turn-on and
turn-off timing while minimizing switching losses. An
internal negative charge regulator provides a
selectable negative gate drive bias for improved dV/dt …