Datasheet Toshiba TLP5231 — Datenblatt

Hersteller	Toshiba
Serie	TLP5231
Artikelnummer	TLP5231

Fotokoppler (Foto-IC-Ausgang)

Der IX4351NE wurde speziell für die Ansteuerung von SiC-MOSFETs und Hochleistungs-IGBTs entwickelt.

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PDF, 1.8 Mb, Sprache: en, Datei veröffentlicht: Mar, 2020, Seiten: 30
Photocouplers. Infrared LED & Photo IC

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TLP5231
Photocouplers Infrared LED & Photo IC TLP5231
1. Applications
• IGBT Gate Drivers • MOSFET Gate Drivers • Industrial Inverters • AC Servos • Photovoltaic (PV) Power Conditioning Systems • Air Conditioner Inverters 2. General
The TLP5231 is a 2.5 A dual-output IGBT gate pre-drive photocoupler including highly integrated multi-functional
IC that is housed in SO16L package having a long creepage and clearance. This photocoupler is suitable as a predriver to driver power devices via external p-and n-channel MOSFET as buffers.
The smart gate driver photocoupler includes functions of IGBT/power MOSFET desaturation detection, isolated
fault status feedback, configurable soft gate turn-off, and under voltage lockout (UVLO).
The TLP5231 consists of two infrared light-emitting diodes (LEDs) and two high-gain and high-speed lightreceiving IC chips. Thereby, they realize the control of output current and the feedback function of the fault signal
while keeping a insulation between a primary side and secondary side electrically. 3. Features
(1) Output peak current: ±2.5 A (max) (2) Operating temperature: -40 to 110 (3) Threshold input current: 3.5 mA (max) (4) Propagation delay time: 300 ns (max) (5) Common-mode transient immunity: ±25 kV/µs (min) (6) Isolation voltage: 5000 Vrms (min) (7) Dual output drive for external complementary type MOS buffer. (8) Under Voltage Lock-Out protection for positive and negative gate power supply. (9) Safety standards
UL-recognized: UL 1577, File No.E67349
cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Japan Factory Note 1: When a VDE approved type is needed, please designate the Option (D4)
(D4). Start of commercial production
©2019-2020
Toshiba Electronic Devices & Storage Corporation 1 2020-01
2020-03-02
Rev.2.0 TLP5231
4. Packaging and Pin Assignment 11-10M1 4.1. Pin Description
Pin No. Symbol 1 N.C. 2 CATHODE Description
No connection …

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Detaillierte Beschreibung

Separate 9A-Quellen- und Senkenausgänge ermöglichen ein maßgeschneidertes Ein- und Ausschalten und minimieren gleichzeitig die Schaltverluste. Ein interner negativer Ladungsregler bietet eine wählbare negative Gate-Ansteuerungsvorspannung für eine verbesserte dV / dt-Immunität und ein schnelleres Ausschalten.

Verpackung

Pins	16
Manufacture Package Code	SO16L
Mounting	Surface Mount
Width×Length×Height	10.3×10.0×2.1 mm

Parameter

Application Scope	Factory automation / Inverter / PV inverter
Assembly bases	Japan
Common mode transient immunity	+/-25 kV/μs
Features	2.5A peak current / Power device desaturation detection / Power device soft gate turn-off / Isolated fault status feedback
Function	Power device pre-driver
ICC2 (Max)	10.2 mA
IEE (Max)	-9.2 mA
Isolation voltage [t=60sec]	5000 Vrms
Number of Circuits	1
Operating Temperature Range	-40 to 110 °C
Output Current Iout (peak) (Max)	+/-2.5 A
Propagation delay time (H/L)(Max)	300 nsec
Propagation delay time (L/H)(Max)	300 nsec
Pulse width distortion	150 nsec
Supply Voltage	-0.5 to 35 V
Supply Voltage(under Recommended Operating Conditions)(Max)	-6.5 V
Supply Voltage(under Recommended Operating Conditions)(Min)	-15.0 V
threshold input current(H/L)	3.5 mA

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Herstellerklassifikation

Semiconductor > Optical Semiconductor Devices