Datasheet Infineon 2ED21834S06J — Datenblatt

2ED2183 (4) S06F (J)
2ED2183 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode
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• VS_OFFSET = 650 V max
Io+pk / Io-pk (typ.) =+ 2.5 A/ -2.5 A
VCC = 10 V to 20 V
Delay Matching = 35 ns max.
Propogation Delay = 200 ns
tON / tOFF (typ.) = 200 ns/ 200 ns •
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-Technology …