Datasheet Toshiba DF2B6M4ASL — Datenblatt

DF2B6M4ASL
ESD Protection Diodes Silicon Epitaxial Planar DF2B6M4ASL
1. General
The DF2B6M4ASL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device
interfaces and other applications to protect against static electricity and noise.
Utilizing snapback characteristics, the DF2B6M4ASL provides low dynamic resistance and superior protective
performance.
Furthermore, it is optimum the high speed signal application for the low capacitance performance. The
DF2B6M4ASL is housed in an ultra-compact package (0.62 mm × 0.32 mm) to meet applications that require a
small footprint. 2. Applications
Mobile Equipment
 Smartphones
 Tablets
 Notebook PCs
Desktop PCs
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation. 3. Features
(1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance.
(VESD = ±15 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise.
(RDYN = 0.7 Ω (typ.) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(VC = 10 V@IPP = 2 A (typ.) (5) Compact package is suitable for use in high density board layouts such as in mobile devices.
(0.62 mm × 0.32 mm size (Nickname: SL2) 4. Packaging SL2 Start of commercial production
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