Datasheet ON Semiconductor FDN336P — Datenblatt

FDN336P FDN336P
Single P-Channel 2.5V Specified PowerTrench® MOSFET
Features General Description
This P-Channel 2.5V specified MOSFET is produced
using
ON
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance. • –1.3 A, –20 V. RDS(ON) = 0.20 Ω @ VGS = –4.5 V • Low gate charge (3.6 nC typical) • High performance trench technology for extremely RDS(ON) = 0.27 Ω @ VGS = –2.5 V low RDS(ON) These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits and DC/DC conversion. • TM SuperSOT -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in
the same footprint D D S
S G
TM SuperSOT -3 G Absolute Maximum Ratings
Symbol
VDSS TA=25oC unless otherwise noted Parameter
Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current – Continuous Maximum Power Dissipation TJ, TSTG Units –20 V ±8 V –1.3
–10 A (Note 1a) 0.5 W (Note 1b) 0.46 (Note 1a) – Pulsed
PD Ratings –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity 336 FDN336P 7’’ 8mm 3000 units ©2005 Semiconductor Components Industries, LLC. …