Datasheet Analog Devices HMC636 — Datenblatt

HerstellerAnalog Devices
SerieHMC636

Hoher IP3 SMT-Verstärker, 0,2 - 4,0 GHz

Datenblätter

Datasheet HMC636ST89, 636ST89E
PDF, 397 Kb, Sprache: en, Datei hochgeladen: Apr 7, 2019, Seiten: 6
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
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Preise

Status

HMC636ST89HMC636ST89EHMC636ST89ETRHMC636ST89TR
Lifecycle StatusProduction (Appropriate for new designs but newer alternatives may exist)Production (Appropriate for new designs but newer alternatives may exist)Production (Appropriate for new designs but newer alternatives may exist)Production (Appropriate for new designs but newer alternatives may exist)

Verpackung

HMC636ST89HMC636ST89EHMC636ST89ETRHMC636ST89TR
N1234
Package3-Lead SOT-893-Lead SOT-893-Lead SOT-893-Lead SOT-89
Pins3333
Package CodeRK-3RK-3RK-3RK-3

Parameter

Parameters / ModelsHMC636ST89HMC636ST89EHMC636ST89ETRHMC636ST89TR
Freq Response RF(max), Hz4G4G4G4G
Freq Response RF(min), Hz200M200M200M200M
Gain dB(typ), dB13131313
Is(typ), A155m155m155m155m
NF(typ), dB2.52.52.52.5
OIP3(typ), dBm39393939
OP1dB(typ), dBm22222222
Operating Temperature Range, °C-40 to 85-40 to 85-40 to 85-40 to 85
RF Primary FunctionGain BlockGain BlockGain BlockGain Block
Vs(typ), V5555

Öko-Plan

HMC636ST89HMC636ST89EHMC636ST89ETRHMC636ST89TR
RoHSNot CompliantCompliantCompliantNot Compliant

Modellreihe

Herstellerklassifikation

  • Amplifiers > Gain Blocks
  • RF & Microwave > Gain Blocks