Datasheet Analog Devices HMC788ACPSZ-EP-R7 — Datenblatt

FEATURES FUNCTIONAL BLOCK DIAGRAM Gain: 14 dB typical
Operational frequency range: 0.01 GHz to 10 GHz
Input/output internally matched to 50 Ω
High input linearity
1 dB compression (P1dB): 20 dBm typical
Output third-order intercept (OIP3): 33 dBm typical
Supply voltage: 5 V typical
2 mm × 2 mm, 6-lead lead frame chip scale package HMC788A
6 NIC NIC 1
RFIN 2 5 RFOUT
4 NIC GND 3 PACKAGE
BASE 16204-001 Data Sheet 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT
RF Gain Block
HMC788A Figure 1. APPLICATIONS
Cellular, 3G, LTE, WiMAX, and 4G
LO driver applications
Microwave radio
Test and measurement equipment
Ultra wideband (UWB) communications GENERAL DESCRIPTION
The HMC788A is a 0.01 GHz to 10 GHz, gain block, monolithic
microwave integrated circuit (MMIC) amplifier using gallium
arsenide (GaAs), pseudomorphic high electron mobility transistor
(pHEMT) technology. …

FEATURES FUNCTIONAL BLOCK DIAGRAM Gain: 14 dB typical
Operational frequency range: 0.01 GHz to 10 GHz
Input/output internally matched to 50 Ω
High input linearity
1 dB compression (P1dB): 20 dBm typical
Output third-order intercept (OIP3): 33 dBm typical
Supply voltage: 5 V typical
2 mm × 2 mm, 6-lead lead frame chip scale package HMC788A-EP
6 NIC NIC 1
RFIN 2 5 RFOUT GND 3 4 NIC
PACKAGE
BASE 16213-001 Enhanced Product 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT
RF Gain Block
HMC788A-EP Figure 1. ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications
(AQEC standard)
Extended industrial temperature range: −55°C to +105°C
Controlled manufacturing baseline
One assembly/test site
1 fabrication site
Enhanced product change notification
Qualification data available on request APPLICATIONS
Cellular, 3G, LTE, WiMAX, and 4G …

FEATURES FUNCTIONAL BLOCK DIAGRAM Gain: 14 dB typical
Operational frequency range: 0.01 GHz to 10 GHz
Input/output internally matched to 50 Ω
High input linearity
1 dB compression (P1dB): 20 dBm typical
Output third-order intercept (OIP3): 33 dBm typical
Supply voltage: 5 V typical
2 mm × 2 mm, 6-lead lead frame chip scale package HMC788A
6 NIC NIC 1
RFIN 2 5 RFOUT GND 3 4 NIC
PACKAGE
BASE 16204-001 Data Sheet 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT
RF Gain Block
HMC788A Figure 1. APPLICATIONS
Cellular, 3G, LTE, WiMAX, and 4G
LO driver applications
Microwave radio
Test and measurement equipment
Ultra wideband (UWB) communications GENERAL DESCRIPTION
The HMC788A is a 0.01 GHz to 10 GHz, gain block, monolithic
microwave integrated circuit (MMIC) amplifier using gallium
arsenide (GaAs), pseudomorphic high electron mobility transistor
(pHEMT) technology. …

FEATURES FUNCTIONAL BLOCK DIAGRAM Gain: 14 dB typical
Operational frequency range: 0.01 GHz to 10 GHz
Input/output internally matched to 50 Ω
High input linearity
1 dB compression (P1dB): 20 dBm typical
Output third-order intercept (OIP3): 33 dBm typical
Supply voltage: 5 V typical
2 mm × 2 mm, 6-lead lead frame chip scale package HMC788A-EP
6 NIC NIC 1
RFIN 2 5 RFOUT GND 3 4 NIC
PACKAGE
BASE 16213-001 Enhanced Product 0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT
RF Gain Block
HMC788A-EP Figure 1. ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications
(AQEC standard)
Extended industrial temperature range: −55°C to +105°C
Controlled manufacturing baseline
One assembly/test site
1 fabrication site
Enhanced product change notification
Qualification data available on request APPLICATIONS
Cellular, 3G, LTE, WiMAX, and 4G …