Datasheet Diodes DGTD65T50S1PT — Datenblatt

DGTD65T50S1PT
650V FIELD STOP IGBT IN TO-247
Description Features The DGTD65T50S1PT is produced using advanced Field Stop Trench
IGBT Technology, which provides excellent quality and high-switching
performance. 
 High-Speed Switching & Low Power Loss
VCE(sat) = 1.85V @ IC = 50A 
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 High Input Impedance
trr = 80ns (typ) @ diF/dt = 1000A/µs
Eoff = 0.55mJ @ TC=25°C 
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 Maximum Junction Temperature 175°C
Lead-Free Finish & RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) Applications Mechanical Data 
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 UPS
Welder
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