Datasheet Diodes DGD2012S8-13 — Datenblatt

DGD2012
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8 Description Features The DGD2012 is a mid-voltage / high-speed gate driver capable of
driving N-Channel MOSFETs in a half-bridge configuration. Highvoltage processing techniques enable the DGD2012’s high-side to
switch to 200V in a bootstrap operation. •
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• The DGD2012 logic inputs are compatible with standard TTL and
CMOS levels (down to 3.3V) to interface easily with controlling
devices. The driver outputs feature high pulse current buffers
designed for minimum driver cross conduction.
The DGD2012 is available in a space saving SO-8 package and
operates over an extended -40°C to +125°C temperature range. Floating High-Side Driver in Bootstrap Operation to 200V
Drives Two N-Channel MOSFETs in Half Bridge Configuration
1.9A Source / 2.3A Sink Output Current Capability
Outputs Tolerant to Negative Transients
Wide Low-Side Gate Driver Supply Voltage: 10V to 20V …