Datasheet Toshiba SSM6N813R — Datenblatt
| Hersteller | Toshiba |
| Serie | SSM6N813R |
Kleinsignal-MOSFET 2 in 1
Datenblätter
SSM6N813R Data sheet/English
PDF, 440 Kb, Sprache: en, Datei veröffentlicht: Sep, 2018
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Preise
Status
| SSM6N813R | SSM6N813R,LF | SSM6N813R,LXGF | |
|---|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | ||
Verpackung
| SSM6N813R | SSM6N813R,LF | SSM6N813R,LXGF | |
|---|---|---|---|
| N | 1 | 2 | 3 |
| Manufacture Package Code | TSOP6F |
Parameter
| Parameters / Models | SSM6N813R | SSM6N813R,LF | SSM6N813R,LXGF |
|---|---|---|---|
| Application Scope | Power Management Switches | ||
| Assembly bases | Thailand | ||
| Component Product (Q1) | SSM6N813R | ||
| Component Product (Q2) | SSM6N813R | ||
| Drain-Source on-resistance (Q1/Q2) (Max) [|VGS|=10V], mΩ | 112 | ||
| Drain-Source on-resistance (Q1/Q2) (Max) [|VGS|=4.5V], mΩ | 154 | ||
| Gate threshold voltage (Q1/Q2) (Max), V | 2.5 | ||
| Generation | U-MOSⅧ-H | ||
| Input capacitance (Q1/Q2) (Typ.), pF | 242 | ||
| Internal Connection | Independent | ||
| Polarity | N-ch×2 | ||
| Total gate charge (Q1/Q2) (Typ.) [VGS=4.5V], nC | 3.6 |
Öko-Plan
| SSM6N813R | SSM6N813R,LF | SSM6N813R,LXGF | |
|---|---|---|---|
| RoHS | Compliant |
Modellreihe
Serie: SSM6N813R (3)
Herstellerklassifikation
- MOSFETs