Datasheet Toshiba SSM6N813R — Datenblatt
| Hersteller | Toshiba |
| Serie | SSM6N813R |
| Artikelnummer | SSM6N813R |
Kleinsignal-MOSFET 2 in 1
Datenblätter
SSM6N813R Data sheet/English
PDF, 440 Kb, Sprache: en, Datei veröffentlicht: Sep, 2018
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
Verpackung
| Manufacture Package Code | TSOP6F |
Parameter
| Application Scope | Power Management Switches |
| Assembly bases | Thailand |
| Component Product (Q1) | SSM6N813R |
| Component Product (Q2) | SSM6N813R |
| Drain-Source on-resistance (Q1/Q2) (Max) [|VGS|=10V] | 112 mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) [|VGS|=4.5V] | 154 mΩ |
| Gate threshold voltage (Q1/Q2) (Max) | 2.5 V |
| Generation | U-MOSⅧ-H |
| Input capacitance (Q1/Q2) (Typ.) | 242 pF |
| Internal Connection | Independent |
| Polarity | N-ch×2 |
| Total gate charge (Q1/Q2) (Typ.) [VGS=4.5V] | 3.6 nC |
Öko-Plan
| RoHS | Compliant |
Modellreihe
Serie: SSM6N813R (3)
- SSM6N813R SSM6N813R,LF SSM6N813R,LXGF
Herstellerklassifikation
- MOSFETs