GEN2 SiC Schottky Diode
LSIC2SD065A08A, 650 V, 8 A, TO-220-2L LSIC2SD065A08A 650 V, 8 A SiC Schottky Barrier Diode RoHS Description SiC This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a
Schottky
Diode
maximum
operating junction temperature of 175 °C. These
diodes series are ideal for applications where improvements
in efficiency, reliability, and thermal management are desired.
Features
• AEC-Q101 qualified • Excellent surge capability • P
ositive temperature
coefficient for safe
operation and ease of
paralleling • E
xtremely fast,
temperature-independent
switching behavior • 1
75 °C maximum
operating junction
temperature Circuit Diagram TO-220-2L • D
ramatically reduced
switching losses
compared to Si bipolar …
