GEN2 SiC Schottky Diode
LSIC2SD065C06A, 650 V, 6 A, TO-252-2L (DPAK) LSIC2SD065C06A 650 V, 6 A SiC Schottky Barrier Diode RoHS Pb Description SiC This series of silicon carbide (SiC) Schottky diodes has
negligible reverse recovery current, high surge capability, and
Schottky
Diodeoperating junction temperature of 175 °C. These
a maximum
diodes series are ideal for applications where improvements in
efficiency, reliability, and thermal management are desired.
Features
• AEC-Q101 qualified • Excellent surge capability • P
ositive temperature
coefficient for safe
operation and ease of
paralleling • E
xtremely fast,
temperature-independent
switching behavior • 1
75 °C maximum
operating junction
temperature
Circuit Diagram TO-252-2L (DPAK) Applications
• B
oost diodes in PFC or …
