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Power MOSFET
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IRLL110, SiHLL110
www.vishay.com Vishay Siliconix Power MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) •
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• 100 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.54
6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single
D Surface mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
Logic-level gate drive
Available
RDS(on) specified at VGS = 4 V and 5 V
Fast switching
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912 DESCRIPTION
Third generation power MOSFETs from Vishay provide the
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