EPC2051 – Enhancement-Mode Power Transistor
Preliminary Specification Sheet
Status: Engineering
Features:
• VDS, 100 V
• Maximum RDS(on), 25 mΩ
Applications:
• Open Rack Server Architectures
• LiDAR/Pulsed Power Applications
• Power Supplies
• Class D Audio
• LED Lighting
• Low Inductance Motor Drive EPC2051 eGaN® FETs are supplied in
passivated die form with copper pillars.
Die Size: 1.3 mm x 0.85 mm Maximum Ratings
VDS
ID VGS
TJ
TSTG Drain-to-Source Voltage (Continuous) 100 Drain-to-Source Voltage (up to 10,000 5ms pulses at 150˚C) 120 Continuous 1.7 Pulsed (25˚C, TPULSE = 300 µs) 37 Gate-to-Source Voltage 6 Gate-to-Source Voltage -4 Operating Temperature -40 to 150 Storage Temperature -40 to 150 V
A V
˚C Static Characteristics (TJ= 25˚C unless otherwise stated)
PARAMETER TEST CONDITIONS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.3 mA IDSS Drain Source Leakage VDS = 80 V, VGS = 0 V MIN TYP MAX UNIT 100 V
0.01 0.25 mA …
