Datasheet New Jersey Semiconductor IRFP362 — Datenblatt
| Hersteller | New Jersey Semiconductor |
| Serie | IRFP362 |
| Artikelnummer | IRFP362 |
Trans-MOSFET N-CH 400 V 23A 3-polig (3 + Tab) TO-247AD
Datenblätter
Datasheet IRFP360, IRFP362
PDF, 650 Kb, Datei hochgeladen: Jun 22, 2018, Seiten: 2
Avalanche-Energy-Rated N-Channel Power MOSFETs
Avalanche-Energy-Rated N-Channel Power MOSFETs
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Preise
Parameter
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Material | Si |
| Maximum Continuous Drain Current | 23 A |
| Maximum Drain Source Voltage | 400 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Power Dissipation | 300000 mW |
| Number of Elements per Chip | 1 |
| Operating Temperature Max | 150 °C |
| Operating Temperature Min | -55 °C |
Andere Optionen
Herstellerklassifikation
- MOSFET