Datasheet NXP J177 — Datenblatt

DISCRETE SEMICONDUCTORS DATA SHEET J174; J175;
J176; J177
P-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification J174; J175;
J176; J177 P-channel silicon field-effect transistors
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in a plastic TO-92
envelope and intended for application
with analog switches, choppers,
commutators etc.
A special feature is the
interchangeability of the drain and
source connections. 1
handbook, halfpage
2
3 d g PINNING
1 = source 2 = gate 3 = drain s MAM388 Note: Drain and source are
interchangeable. Fig.1 Simplified outline and symbol, TO-92. QUICK REFERENCE DATA
Drain-source voltage ± VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current −IG max. 50 mA Ptot max. 400 mW Total power dissipation
up to Tamb = 50 °C J174 J175 J176 J177 Drain current …