Datasheet Texas Instruments UCC27712DR — Datenblatt
| Hersteller | Texas Instruments |
| Serie | UCC27712 |
| Artikelnummer | UCC27712DR |
620-V-, 1,8-A-, 2,8-A-High-Side-Low-Side-Gate-Treiber mit Verriegelung 8-SOIC -40 bis 125
Datenblätter
UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock datasheet
PDF, 1.2 Mb, Datei veröffentlicht: Jun 6, 2017
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | U27712 |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | Herunterladen |
Parameter
| Bus Voltage | 620 V |
| Channel Input Logic | Non-Inverting |
| Fall Time | 10 ns |
| Input Threshold | TTL,CMOS |
| Input VCC(Max) | 20 V |
| Input VCC(Min) | 10 V |
| Iq | 250 uA |
| Negative Voltage Handling at HS Pin | -11 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 125 C |
| Package Group | SOIC |
| Peak Output Current | 2.8 A |
| Power Switch | MOSFET,IGBT |
| Prop Delay | 100 ns |
| Rating | Catalog |
| Rise Time | 16 ns |
| Special Features | Interlock |
Öko-Plan
| RoHS | Compliant |
Design Kits und Evaluierungsmodule
- Evaluation Modules & Boards: UCC27712EVM-287
UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver With Interlock Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
Modellreihe
Serie: UCC27712 (2)
- UCC27712D UCC27712DR
Herstellerklassifikation
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Half-bridge Driver