Datasheet Texas Instruments UCC27212AQDDARQ1 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | UCC27212A-Q1 |
| Artikelnummer | UCC27212AQDDARQ1 |
Automobil, 120-V-Kofferraum, 4-A-Spitzen-, Hochfrequenz-High-Side- und Low-Side-Treiber 8-SO PowerPAD -40 bis 140
Datenblätter
UCC27212A-Q1 Automotive 120-V Boot, 4-A Peak, High-Frequency High-Side and Low-Side Driver datasheet
PDF, 851 Kb, Datei veröffentlicht: May 2, 2017
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Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
Verpackung
| Pin | 8 |
| Package Type | DDA |
| Industry STD Term | HSOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 27212Q |
| Width (mm) | 3.9 |
| Length (mm) | 4.89 |
| Thickness (mm) | 1.48 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.7 |
| Mechanical Data | Herunterladen |
Parameter
| Bus Voltage | 120 V |
| Channel Input Logic | TTL |
| Fall Time | 5.5 ns |
| Input Threshold | TTL |
| Input VCC(Max) | 17 V |
| Input VCC(Min) | 5 V |
| Iq | 1 uA |
| Negative Voltage Handling at HS Pin | -20 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 140 C |
| Package Group | SO PowerPAD |
| Peak Output Current | 4 A |
| Power Switch | MOSFET,IGBT,GaNFET |
| Prop Delay | 20 ns |
| Rating | Automotive |
| Rise Time | 7.2 ns |
| Special Features | N/A |
Öko-Plan
| RoHS | Compliant |
Design Kits und Evaluierungsmodule
- Evaluation Modules & Boards: UCC27212EVM-328
UCC27212 Evaluation Module With Power Stage
Lifecycle Status: Active (Recommended for new designs)
Modellreihe
Serie: UCC27212A-Q1 (1)
- UCC27212AQDDARQ1
Herstellerklassifikation
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Half-bridge Driver