Datasheet Texas Instruments TLV8542DR — Datenblatt

HerstellerTexas Instruments
SerieTLV8542
ArtikelnummerTLV8542DR
Datasheet Texas Instruments TLV8542DR

500 nA RRIO Nanopower Operationsverstärker 8-SOIC -40 bis 125

Datenblätter

TLV8544, TLV8542 500 nA RRIO Nanopower Operational Amplifier datasheet
PDF, 1.5 Mb, Revision: B, Datei veröffentlicht: Jun 20, 2017
Auszug aus dem Dokument

Preise

Status

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

Verpackung

Pin8
Package TypeD
Industry STD TermSOIC
JEDEC CodeR-PDSO-G
Package QTY2500
CarrierLARGE T&R
Device MarkingTL8542
Width (mm)3.91
Length (mm)4.9
Thickness (mm)1.58
Pitch (mm)1.27
Max Height (mm)1.75
Mechanical DataHerunterladen

Parameter

Additional FeaturesCost Optimized,EMI Hardened
ArchitectureCMOS
CMRR(Typ)80 dB
GBW(Typ)0.008 MHz
Iq per channel(Max)0.00064 mA
Iq per channel(Typ)0.0005 mA
Number of Channels2
Offset Drift(Typ)0.8 uV/C
Operating Temperature Range-40 to 125 C
Output Current(Typ)15 mA
Package GroupSOIC
Package Size: mm2:W x L8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG
Rail-to-RailIn,Out
RatingCatalog
Slew Rate(Typ)0.0035 V/us
Total Supply Voltage(Max)3.6 +5V=5, +/-5V=10
Total Supply Voltage(Min)1.7 +5V=5, +/-5V=10
Vn at 1kHz(Typ)264 nV/rtHz
Vos (Offset Voltage @ 25C)(Max)3.1 mV

Öko-Plan

RoHSCompliant

Modellreihe

Serie: TLV8542 (2)

Herstellerklassifikation

  • Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Ultra-Low-Power Op Amps (<=10uA)