Datasheet Texas Instruments DRV5012AEDMRR — Datenblatt
Hersteller | Texas Instruments |
Serie | DRV5012 |
Artikelnummer | DRV5012AEDMRR |
Digital-Latch-Hall-Effekt-Sensor mit extrem geringem Stromverbrauch 4-X2SON -40 bis 85
Datenblätter
DRV5012 Ultra-Low-Power Digital-Latch Hall-Effect Sensor datasheet
PDF, 1.1 Mb, Datei veröffentlicht: Aug 18, 2017
Auszug aus dem Dokument
Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes |
Verpackung
Pin | 4 |
Package Type | DMR |
Industry STD Term | X2SON |
JEDEC Code | R-PSSO-N |
Package QTY | 3000 |
Carrier | LARGE T&R |
Device Marking | 2AE |
Width (mm) | 1.1 |
Length (mm) | 1.4 |
Thickness (mm) | .4 |
Pitch (mm) | .5 |
Max Height (mm) | .4 |
Mechanical Data | Herunterladen |
Parameter
Bandwidth | 0.020,2.5 kHz |
ICC | 0.0013,0.142 mA |
Operate Point(Max) | 3.3 mT |
Operating Temperature Range | -40 to 85 C |
Output | Push-pull output driver |
Package Group | X2SON |
Package Size: mm2:W x L | 4X2SON: 2 mm2: 1.1 x 1.4(X2SON) PKG |
Rating | Catalog |
Release Point(Min) | -3.3 mT |
Supply Voltage (Vcc)(Max) | 5.5 V |
Supply Voltage (Vcc)(Min) | 1.65 V |
Type | Latch |
Öko-Plan
RoHS | Compliant |
Anwendungshinweise
- Incremental Rotary Encoder Design ConsiderationsPDF, 59 Kb, Datei veröffentlicht: Sep 27, 2017
- Power Gating Systems with Magnetic Sensors (Rev. A)PDF, 442 Kb, Revision: A, Datei veröffentlicht: Sep 7, 2017
Modellreihe
Serie: DRV5012 (2)
- DRV5012AEDMRR DRV5012AEDMRT
Herstellerklassifikation
- Semiconductors > Sensing Products > Magnetic Sensors > Hall Effect Sensors > Digital Hall Effect Sensors