Datasheet Texas Instruments CSD18511KTT — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD18511KTT |
| Artikelnummer | CSD18511KTT |
40-V-N-Kanal-NexFET ™ -Leistungs-MOSFET 3-DDPAK / TO-263 -55 bis 175
Datenblätter
CSD18511KTT 40-V N-Channel NexFET Power MOSFET datasheet
PDF, 951 Kb, Datei veröffentlicht: Jul 24, 2017
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Preise
Status
| Lifecycle Status | Preview (Device has been announced but is not in production. Samples may or may not be available) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 3 |
| Package Type | KTT |
| Industry STD Term | TO-263 |
| JEDEC Code | R-PSFM-G |
| Package QTY | 500 |
| Carrier | LARGE T&R |
| Device Marking | CSD18511KTT |
| Width (mm) | 8.41 |
| Length (mm) | 10.18 |
| Thickness (mm) | 4.44 |
| Pitch (mm) | 2.54 |
| Max Height (mm) | 4.83 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 194 A |
| ID, package limited | 110 A |
| IDM, Max Pulsed Drain Current(Max) | 400 A |
| Package | D2PAK mm |
| QG Typ | 64 nC |
| QGD Typ | 9.7 nC |
| RDS(on) Typ at VGS=4.5V | 3.2 mOhm |
| Rds(on) Max at VGS=10V | 2.6 mOhms |
| Rds(on) Max at VGS=4.5V | 4.2 mOhms |
| VDS | 40 V |
| VGS | 20 V |
| VGSTH Typ | 1.8 V |
Öko-Plan
| RoHS | Compliant |
| Pb Free | Yes |
Modellreihe
Serie: CSD18511KTT (2)
- CSD18511KTT CSD18511KTTT
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor