Datasheet Texas Instruments CSD17318Q2T — Datenblatt
| Hersteller | Texas Instruments |
| Serie | CSD17318Q2 |
| Artikelnummer | CSD17318Q2T |
30-V-N-Kanal-NexFET ™ -Leistungs-MOSFET 6-WSON -55 bis 150
Datenblätter
CSD17318Q2 30-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 941 Kb, Revision: A, Datei veröffentlicht: Jul 18, 2017
Auszug aus dem Dokument
Preise
Status
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
Verpackung
| Pin | 6 |
| Package Type | DQK |
| Package QTY | 250 |
| Carrier | SMALL T&R |
| Device Marking | 1718 |
| Width (mm) | 2 |
| Length (mm) | 2 |
| Thickness (mm) | .75 |
| Mechanical Data | Herunterladen |
Parameter
| Configuration | Single |
| ID, Silicon limited at Tc=25degC | 25 A |
| IDM, Max Pulsed Drain Current(Max) | 68 A |
| Package | SON2x2 mm |
| QG Typ | 6.0 nC |
| QGD Typ | 1.3 nC |
| RDS(on) Typ at VGS=4.5V | 13.9 mOhm |
| Rds(on) Max at VGS=4.5V | 16.9 mOhms |
| VDS | 30 V |
| VGS | 10 V |
| VGSTH Typ | 0.9 V |
Öko-Plan
| RoHS | Compliant |
Modellreihe
Serie: CSD17318Q2 (2)
- CSD17318Q2 CSD17318Q2T
Herstellerklassifikation
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor