Datasheet Intersil HS0-4423BEH-Q — Datenblatt

DATASHEET
HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH FN4564
Rev 5.00
February 11, 2014 Radiation Hardened Dual, Inverting Power MOSFET Drivers
The Radiation Hardened HS-4423RH, HS-4423EH,
HS-4423BRH, HS-4423BEH are inverting, dual, monolithic
high-speed MOSFET drivers designed to convert TTL level
signals into high current outputs at voltages up to 18V. Features The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of high
gate capacitance power MOSFETs in high frequency
applications. EH version acceptance tested to 50krad(Si) (LDR) The high current outputs minimize power losses in MOSFETs by
rapidly charging and discharging the gate capacitance. The
output stage incorporates a low voltage lock-out circuit that
puts the outputs into a three-state mode when the supply
voltage drops below 10V for the HS-4423RH, HS-4423EH and
7.5V for the HS-4423BRH and HS-4423BEH. IPEAK . >2A (typ) Electrically screened to DLA SMD # 5962-99511 QML qualified per MIL-PRF-38535 requirements Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are immune
to Single Event Latch-up and have been specifically designed
to provide highly reliable performance in harsh radiation
environments Radiation environment
-High dose rate (50-300rad(Si)/s) . 300krad(Si) …