Datasheet Intersil ISL73096EHVX — Datenblatt

DATASHEET
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,
ISL73128EH FN6475
Rev 4.00
June 27, 2014 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
The ISL73096, ISL73127 and ISL73128 are radiation
hardened bipolar transistor arrays. The ISL73096 consists of
three NPN transistors and two PNP transistors on a common
substrate. The ISL73127 consists of five NPN transistors on a
common substrate. The ISL73128 consists of five PNP
transistors on a common substrate.
The ISL73096EH, ISL73127EH and ISL73128EH devices
encompass all of the production testing of the ISL73096RH,
ISL73127RH and ISL73128RH devices and additionally are
tested in the Intersil Enhanced Low Dose Rate Sensitivity
(ELDERS) product manufacturing flow.
One of our bonded wafer, dielectrically isolated fabrication
processes provides an immunity to single event latch-up and
the capability of highly reliable performance in a radiation
environment. Features Electrically screened to SMD # 5962-07218 QML qualified per MIL-PRF-38535 requirements Radiation tolerance
-High dose rate (50-300rad(Si)/s) . 100krad(Si)
-Low dose rate (0.01rad(Si)/s) . 50krad(Si)*
-SEL immune Bonded wafer dielectric isolation NPN gain bandwidth product (FT) 8GHz (typ) NPN current gain (hFE) 130 (typ) NPN early voltage (VA) . 50V (typ) PNP gain bandwidth product (FT) . 5.5GHz (typ) PNP current gain (hFE) 60 (typ) The high gain-bandwidth product and low noise figure of these …