Datasheet Microchip TC8020K6-G — Datenblatt

Supertex inc. TC8020 Six Pair, N-and P-Channel
Enhancement-Mode MOSFET
Features в–єв–є High voltage, vertical DMOS technology
в–єв–є Integrated gate-to-source resistor
в–єв–є Integrated gate-to-source Zener diode
в–єв–є Typical peak output +/-3.5A at 50V
в–єв–є Low threshold, low on-resistance
в–єв–є Low input & output capacitance
в–єв–є Fast switching speeds
в–єв–є Electrically isolated N-and P-MOSFET pairs Applications в–єв–є High voltage pulsers
в–єв–є Amplifiers
в–єв–є Buffers
в–єв–є Piezoelectric transducer drivers
в–єв–є General purpose line drivers
в–єв–є Logic level interfaces General Description The Supertex TC8020 consists of six pairs of high voltage,
low threshold N-and P-channel MOSFETs in a 56-lead QFN
package. All MOSFETs have integrated gate-to-source resistors
and gate-to-source Zener diode clamps which are desired for
high voltage pulser applications. The complimentary, high-speed,
high voltage, gate-clamped N-and P-channel MOSFET pairs
utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of bipolar
transistors and with the high input impedance and positive …