Datasheet Microchip VP3203N3-G — Datenblatt

Supertex inc. VP3203 P-Channel Enhancement-Mode
Vertical DMOS FET Features General Description This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown. в–єв–є Free from secondary breakdown
в–єв–є Low power drive requirement
в–єв–є Ease of paralleling
в–єв–є Low CISS and fast switching speeds
в–єв–є High input impedance and high gain
в–єв–є Excellent thermal stability
в–єв–є Integral source-to-drain diode Applications в–єв–є Motor controls
в–єв–є Converters
в–єв–є Amplifiers
в–єв–є Switches
в–єв–є Power supply circuits
в–єв–є Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information
Part Number
VP3203N3-G Product Summary Package Option Packing 3-Lead TO-92 1000/Bag 3-Lead TO-92 2000/Reel VP3203N3-G P002 …