Datasheet Microchip VP2450N3-G — Datenblatt

VP2450
P-Channel Enhancement-Mode Vertical DMOS FET
Features General Description The VP2450 is a low-threshold, Enhancement-mode
(normally-off) transistor that utilizes a vertical
Double-diffused Metal-Oxide Semiconductor (DMOS)
structure and a well-proven silicon gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal
runaway and thermally induced secondary breakdown. Free from Secondary Breakdown
Low Power Drive Requirement
Ease of Paralleling
Low CISS and Fast Switching Speeds
High Input Impedance and High Gain
Excellent Thermal Stability
Integral Source-drain Diode Applications Motor Controls
Converters
Amplifiers
Switches
Power Supply Circuits
Drivers: Relays, Hammers, Solenoids, Lamps, …