Datasheet Microchip VP2206N3-G — Datenblatt

Supertex inc. VP2206 P-Channel Enhancement-Mode
Vertical DMOS FET
Features General Description в–єв–є Free from secondary breakdown
в–єв–є Low power drive requirement
в–єв–є Ease of paralleling
в–єв–є Low CISS and fast switching speeds
в–єв–є High input impedance and high gain
в–єв–є Excellent thermal stability
в–єв–є Integral source-to-drain diode The Supertex VP2206 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown. Applications в–єв–є Motor controls
в–єв–є Converters, amplifiers, and switches
в–єв–є Power supply circuits
в–єв–є Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Product Summary VP2206N2-G Package
Option
TO-39 500/Bag VP2206N3-G TO-92 1000/Bag Part Number Packing BVDSS/BVDGS VP2206N3-G P002 -60V RDS(ON) ID(ON) (max) (min) 0.9О© -4.0A Pin Configuration VP2206N3-G P003
VP2206N3-G P005 Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where …