Datasheet Microchip TP5322K1-G — Datenblatt

Supertex inc. TP5322 P-Channel Enhancement-Mode
Vertical DMOS FET
General Description Features
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є
в–єв–є The Supertex TP5322 is a low threshold enhancementmode (normally-off) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown. High input impedance
Low threshold (-2.4V max.)
Low input capacitance (110pF max.)
Fast switching speeds
Low on-resistance
Low input and output leakage
Free from secondary breakdown Applications …