Datasheet Microchip TP0604 — Datenblatt

HerstellerMicrochip
SerieTP0604

Dieser Enhancement-Mode-Transistor mit niedriger Schwelle (normalerweise ausgeschaltet) verwendet eine vertikale DMOS-Struktur und ein bewährtes Silizium-Gate-Herstellungsverfahren

Datenblätter

TP0604 Datasheet - P-Channel Enhancement-Mode Vertical DMOS FET
PDF, 642 Kb, Revision: 06-22-2014
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Preise

Status

TP0604N3-GTP0606N3-GTP0606N3-G-P002TP0606N3-G-P003
Lifecycle StatusProduction (Appropriate for new designs but newer alternatives may exist)Production (Appropriate for new designs but newer alternatives may exist)Production (Appropriate for new designs but newer alternatives may exist)Production (Appropriate for new designs but newer alternatives may exist)

Verpackung

TP0604N3-GTP0606N3-GTP0606N3-G-P002TP0606N3-G-P003
N1234
PackageTO-92TO-92TO-92TO-92
Pins3333

Parameter

Parameters / ModelsTP0604N3-GTP0606N3-GTP0606N3-G-P002TP0606N3-G-P003
BVdss min, V-40-40-40-40
CISSmax, pF150150150150
Operating Temperature Range, °C-55 to +150-55 to +150-55 to +150-55 to +150
Rds, on) max2222
Vgs(th) max, V-2.4-2.4-2.4-2.4

Öko-Plan

TP0604N3-GTP0606N3-GTP0606N3-G-P002TP0606N3-G-P003
RoHSCompliant

Modellreihe