Datasheet Microchip VN2460N3-G-P003 — Datenblatt

Supertex inc. VN2460 N-Channel Enhancement-Mode
Vertical DMOS FET
General Description Features в–єв–є Free from secondary breakdown
в–єв–є Low power drive requirement
в–єв–є Ease of paralleling
в–єв–є Low CISS and fast switching speeds
в–єв–є Excellent thermal stability
в–єв–є Integral source-drain diode
в–єв–є High input impedance and high gain Applications в–єв–є Motor controls
в–єв–є Converters, amplifiers, and switches
в–єв–є Power supply circuits
в–єв–є Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input …