Datasheet Microchip 2N7008-G — Datenblatt

Supertex inc. 2N7008 N-Channel Enhancement-Mode
Vertical DMOS FETs
Features General Description в–єв–є Free from secondary breakdown
в–єв–є Low power drive requirement
в–єв–є Ease of paralleling
в–єв–є Low CISS and fast switching speeds
в–єв–є Excellent thermal stability
в–єв–є Integral source-drain diode
в–єв–є High input impedance and high gain The Supertex 2N7008 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown. Applications в–єв–є Motor controls
в–єв–є Converters
в–єв–є Amplifiers
в–єв–є Switches
в–єв–є Power supply circuits
►► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high …