Datasheet Linear Technology LTC4446EMS8E#PBF — Datenblatt

LTC4446
High Voltage High Side/
Low Side N-Channel
MOSFET Driver
DESCRIPTION FEATURES n Bootstrap Supply Voltage Up to 114V
Wide VCC Voltage: 7.2V to 13.5V
2.5A Peak Top Gate Pull-Up Current
3A Peak Bottom Gate Pull-Up Current
1.2О© Top Gate Driver Pull-Down
0.55О© Bottom Gate Driver Pull-Down
5ns Top Gate Fall Time Driving 1nF Load
8ns Top Gate Rise Time Driving 1nF Load
3ns Bottom Gate Fall Time Driving 1nF Load
6ns Bottom Gate Rise Time Driving 1nF Load
Drives Both High and Low Side N-Channel MOSFETs
Undervoltage Lockout
Thermally Enhanced 8-Pin MSOP Package n The LTC4446 is configured for two supply-independent
inputs. The high side input logic signal is internally
level-shifted to the bootstrapped supply, which may
function at up to 114V above ground.
The LTC4446 contains undervoltage lockout circuits that
disable the external MOSFETs when activated. APPLICATIONS
n The LTCВ®4446 is a high frequency high voltage gate driver …