Datasheet IXKR40N60C - IXYS MOSFET, N, ISOPLUS247 — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS

Description: MOSFET, N, ISOPLUS247

Download Data Sheet

Docket:
Advanced Technical Information
CoolMOS Power MOSFET
in ISOPLUS247TM Package
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base
VDSS IXKR 40N60C 600 V

Specifications:

• Capacitance Ciss Typ: 7600 pF
• Continuous Drain Current Id: 38 A
• Current Id Max: 38 A
• Drain Source Voltage Vds: 600 V
• Isolation Voltage: 2.5 kV
• Mounting Type: Through Hole
• N-channel Gate Charge: 250nC
• Number of Pins: 3
• On State Resistance: 70 MOhm
• Operating Temperature Range: -40°C to +150°C
• Package / Case: ISOPLUS-247
• Power Dissipation Pd: 280 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 650 ns
• Rth: 0.45
• Threshold Voltage Vgs Typ: 3.9 V
• Transistor Case Style: ISOPLUS-247
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A