Datasheet IRF8910PBF - International Rectifier TRANSISTOR, MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: TRANSISTOR, MOSFET

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Docket:
PD - 95868A
IRF8910
HEXFET® Power MOSFET
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.

Gate Rating
VDSS

Simulation Model

Specifications:

• Continuous Drain Current Id: 10 A
• Current Id Max: 10 A
• Drain Source Voltage Vds: 20 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 13.4 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.55 V
• Transistor Case Style: SOIC
• Transistor Polarity: Dual N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 2.55 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Roth Elektronik - RE932-01