Datasheet IRF6604TR1 - International Rectifier MOSFET, N, DIRECTFET, MQ — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MQ

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Docket:
l
Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
VDSS
30V
RDS(on) max

Specifications:

• Capacitance Ciss Typ: 2270 pF
• Charge Qrr @ Tj = 25В°C Typ: 28nC
• Continuous Drain Current Id: 59 A
• Current Id Max: 12.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 6.35 mm
• External Length / Height: 0.7 mm
• External Width: 5.05 mm
• Full Power Rating Temperature: 25°C
• IC Package (Case style): MQ
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -40°C
• Mounting Type: SMD
• Number of Pins: 7
• Number of Transistors: 1
• On Resistance Rds(on): 11.5 MOhm
• On State Resistance Max: 11.5 MOhm
• Package / Case: MQ
• Power Dissipation Pd: 2.3 W
• Pulse Current Idm: 92 A
• Rds(on) Test Voltage Vgs: 7 V
• Reverse Recovery Time trr Typ: 31 ns
• SMD Marking: 6604
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.1 V
• Transistor Case Style: MQ
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 7 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7