PDF, 109 Kb, Sprache: en, Datei veröffentlicht: Aug 25, 1997, Seiten: 8
HEXFET Power MOSFET
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PD -9.1370C IRL3705N
HEXFET® Power MOSFET
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l Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated D VDSS = 55V
RDS(on) = 0.01Ω G Description ID = 89A
S Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation …