Datasheet International Rectifier IRLZ34N — Datenblatt

PD -9.1307B IRLZ34N
HEXFET® Power MOSFET
l
l
l
l
l
l Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated D VDSS = 55V
RDS(on) = 0.035Ω G ID = 30A S Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation …