Datasheet IRF250 - International Rectifier MOSFET, N, TO-3 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, TO-3

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Docket:
Provisional Data Sheet No.

PD-9.338D
HEXFET
®
JANTX2N6766 POWER MOSFET JANTXV2N6766 [REF:MIL-PRF-19500/543] [GENERIC:IRF250]
N-CHANNEL Product Summary

Simulation Model

Specifications:

• Continuous Drain Current Id: 30 A
• Current Id Max: 30 A
• Current Temperature: 25°C
• Device Marking: IRF250
• Drain Source Voltage Vds: 200 V
• Fixing Centres: 30 mm
• Full Power Rating Temperature: 25°C
• Lead Spacing: 11 mm
• Mounting Type: Through Hole
• Number of Pins: 2
• Number of Transistors: 1
• On Resistance Rds(on): 85 MOhm
• Package / Case: TO-3
• Power Dissipation Pd: 150 W
• Pulse Current Idm: 120 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-3
• Transistor Polarity: N Channel
• Voltage Vds Typ: 200 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V

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