Datasheet IRF460 - International Rectifier MOSFET, N, TO-3 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: MOSFET, N, TO-3

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Docket:
PD -90467
REPETITIVE A ALANCHE AND dv/dt RATED V
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF460 BVDSS 500V RDS(on) 0.27 ID 21

Specifications:

• Avalanche Single Pulse Energy Eas: 1200mJ
• Continuous Drain Current Id: 21 A
• Current Iar: 21 A
• Current Id Max: 21 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 500 V
• Fixing Centres: 30 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Lead Spacing: 11 mm
• Mounting Type: Through Hole
• Number of Pins: 2
• Number of Transistors: 1
• On Resistance Rds(on): 270 MOhm
• Package / Case: TO-3
• Power Dissipation Pd: 300 W
• Pulse Current Idm: 84 A
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 30mJ
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-3
• Transistor Polarity: N Channel
• Voltage Vds Typ: 500 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Weight: 11.5 g

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