Datasheet SDT12S60 - Infineon DIODE, SCHOTTKY, SIC, 600 V — Datenblatt

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Manufacturer: Infineon

Description: DIODE, SCHOTTKY, SIC, 600 V

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Docket:
Preliminary data Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery
SDT12S60
Product Summary VRRM Qc IF 600 30 12
P-TO220-2-2.
Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature

Specifications:

• Alternate Case Style: DO-220
• Current Ifsm: 36 A
• Diode Type: Schottky
• Forward Current If(AV): 12 A
• Forward Surge Current Ifsm Max: 36 A
• Forward Voltage VF Max: 1.7 V
• Junction Temperature Tj Max: 175°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Through Hole
• Number of Pins: 2
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-220
• Repetitive Reverse Voltage Vrrm Max: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5