Datasheet Texas Instruments TLV2170 — Datenblatt
| Hersteller | Texas Instruments |
| Serie | TLV2170 |
36 V, 1,2 MHz, microPower, Rail-to-Rail-Ausgang, Allzweck-Operationsverstärker
Datenblätter
TLVx170 36-V, Single-Supply, EMI-Hardened, Low-Power Operational Amplifiers for Cost-Sensitive Systems datasheet
PDF, 1.9 Mb, Datei veröffentlicht: Nov 16, 2016
Auszug aus dem Dokument
Preise
Status
| TLV2170IDGKR | TLV2170IDGKT | TLV2170IDR | |
|---|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes | Yes |
Verpackung
| TLV2170IDGKR | TLV2170IDGKT | TLV2170IDR | |
|---|---|---|---|
| N | 1 | 2 | 3 |
| Pin | 8 | 8 | 8 |
| Package Type | DGK | DGK | D |
| Industry STD Term | VSSOP | VSSOP | SOIC |
| JEDEC Code | R-PDSO-G | R-PDSO-G | R-PDSO-G |
| Package QTY | 2500 | 250 | 2500 |
| Carrier | LARGE T&R | SMALL T&R | LARGE T&R |
| Device Marking | 14NV | 14NV | TL2170 |
| Width (mm) | 3 | 3 | 3.91 |
| Length (mm) | 3 | 3 | 4.9 |
| Thickness (mm) | .97 | .97 | 1.58 |
| Pitch (mm) | .65 | .65 | 1.27 |
| Max Height (mm) | 1.07 | 1.07 | 1.75 |
| Mechanical Data | Herunterladen | Herunterladen | Herunterladen |
Parameter
| Parameters / Models | TLV2170IDGKR | TLV2170IDGKT | TLV2170IDR |
|---|---|---|---|
| Additional Features | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened |
| Architecture | CMOS | CMOS | CMOS |
| CMRR(Min), dB | 95 | 95 | 95 |
| CMRR(Typ), dB | 110 | 110 | 110 |
| GBW(Typ), MHz | 1.2 | 1.2 | 1.2 |
| Iq per channel(Max), mA | 0.175 | 0.175 | 0.175 |
| Iq per channel(Typ), mA | 0.125 | 0.125 | 0.125 |
| Number of Channels | 2 | 2 | 2 |
| Offset Drift(Typ), uV/C | 2 | 2 | 2 |
| Operating Temperature Range, C | -40 to 125 | -40 to 125 | -40 to 125 |
| Output Current(Typ), mA | 17 | 17 | 17 |
| Package Group | VSSOP | VSSOP | SOIC |
| Package Size: mm2:W x L, PKG | 8VSSOP: 15 mm2: 4.9 x 3(VSSOP) | 8VSSOP: 15 mm2: 4.9 x 3(VSSOP) | 8SOIC: 29 mm2: 6 x 4.9(SOIC) |
| Rail-to-Rail | Out | Out | Out |
| Rating | Catalog | Catalog | Catalog |
| Slew Rate(Typ), V/us | 0.4 | 0.4 | 0.4 |
| Total Supply Voltage(Max), +5V=5, +/-5V=10 | 36 | 36 | 36 |
| Total Supply Voltage(Min), +5V=5, +/-5V=10 | 2.7 | 2.7 | 2.7 |
| Vn at 1kHz(Typ), nV/rtHz | 22 | 22 | 22 |
| Vos (Offset Voltage @ 25C)(Max), mV | 2.5 | 2.5 | 2.5 |
Öko-Plan
| TLV2170IDGKR | TLV2170IDGKT | TLV2170IDR | |
|---|---|---|---|
| RoHS | Compliant | Compliant | Compliant |
Modellreihe
Serie: TLV2170 (3)
Herstellerklassifikation
- Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps