Datasheet Texas Instruments TLE2161A — Datenblatt

Hersteller	Texas Instruments
Serie	TLE2161A

Excalibur JFET-Eingang Hochleistungsausgang uPower-Operationsverstärker

Datenblätter

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PDF, 1.0 Mb, Revision: D, Datei veröffentlicht: May 1, 1996

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Preise

Status

	TLE2161ACD	TLE2161ACP	TLE2161AID	TLE2161AIDG4	TLE2161AIDR	TLE2161AIP
Lifecycle Status	Active (Recommended for new designs)	Obsolete (Manufacturer has discontinued the production of the device)	Active (Recommended for new designs)	Active (Recommended for new designs)	Active (Recommended for new designs)	Obsolete (Manufacturer has discontinued the production of the device)
Manufacture's Sample Availability	No	No	No	No	No	No

Verpackung

	TLE2161ACD	TLE2161ACP	TLE2161AID	TLE2161AIDG4	TLE2161AIDR	TLE2161AIP
N	1	2	3	4	5	6
Pin	8	8	8	8	8	8
Package Type	D	P	D	D	D	P
Industry STD Term	SOIC	PDIP	SOIC	SOIC	SOIC	PDIP
JEDEC Code	R-PDSO-G	R-PDIP-T	R-PDSO-G	R-PDSO-G	R-PDSO-G	R-PDIP-T
Package QTY	75		75	75	2500
Carrier	TUBE		TUBE	TUBE	LARGE T&R
Device Marking	2161AC		2161AI	2161AI	2161AI
Width (mm)	3.91	6.35	3.91	3.91	3.91	6.35
Length (mm)	4.9	9.81	4.9	4.9	4.9	9.81
Thickness (mm)	1.58	3.9	1.58	1.58	1.58	3.9
Pitch (mm)	1.27	2.54	1.27	1.27	1.27	2.54
Max Height (mm)	1.75	5.08	1.75	1.75	1.75	5.08
Mechanical Data	Herunterladen	Herunterladen	Herunterladen	Herunterladen	Herunterladen	Herunterladen

Parameter

Parameters / Models	TLE2161ACD	TLE2161ACP	TLE2161AID	TLE2161AIDG4	TLE2161AIDR	TLE2161AIP
Additional Features	Decompensated	Decompensated Vos Adj Pin	Decompensated	Decompensated	Decompensated	Decompensated Vos Adj Pin
Approx. Price (US$)		0.84 \| 1ku				0.84 \| 1ku
Architecture	FET	FET	FET	FET	FET	FET
CMRR(Min), dB	72		72	72	72
CMRR(Min)(dB)		72				72
CMRR(Typ), dB	90		90	90	90
CMRR(Typ)(dB)		90				90
GBW(Typ), MHz	6.4		6.4	6.4	6.4
GBW(Typ)(MHz)		6.4				6.4
Input Bias Current(Max), pA	60		60	60	60
Input Bias Current(Max)(pA)		60				60
Iq per channel(Max), mA	0.35		0.35	0.35	0.35
Iq per channel(Max)(mA)		0.35				0.35
Iq per channel(Typ), mA	0.29		0.29	0.29	0.29
Iq per channel(Typ)(mA)		0.29				0.29
Number of Channels	1		1	1	1
Number of Channels(#)		1				1
Offset Drift(Typ), uV/C	6		6	6	6
Offset Drift(Typ)(uV/C)		6				6
Operating Temperature Range, C	0 to 70		0 to 70	0 to 70	0 to 70
Operating Temperature Range(C)		0 to 70				0 to 70
Output Current(Typ), mA	50		50	50	50
Output Current(Typ)(mA)		50				50
Package Group	SOIC	SOIC	SOIC	SOIC	SOIC	SOIC
Package Size: mm2:W x L, PKG	8SOIC: 29 mm2: 6 x 4.9(SOIC)		8SOIC: 29 mm2: 6 x 4.9(SOIC)	8SOIC: 29 mm2: 6 x 4.9(SOIC)	8SOIC: 29 mm2: 6 x 4.9(SOIC)
Package Size: mm2:W x L (PKG)		See datasheet (PDIP)				See datasheet (PDIP)
Rail-to-Rail	In to V+	In to V+	In to V+	In to V+	In to V+	In to V+
Rating	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog
Slew Rate(Typ), V/us	10		10	10	10
Slew Rate(Typ)(V/us)		10				10
Total Supply Voltage(Max), +5V=5, +/-5V=10	36		36	36	36
Total Supply Voltage(Max)(+5V=5, +/-5V=10)		36				36
Total Supply Voltage(Min), +5V=5, +/-5V=10	7		7	7	7
Total Supply Voltage(Min)(+5V=5, +/-5V=10)		7				7
Vn at 1kHz(Typ), nV/rtHz	40		40	40	40
Vn at 1kHz(Typ)(nV/rtHz)		40				40
Vos (Offset Voltage @ 25C)(Max), mV	1.5		1.5	1.5	1.5
Vos (Offset Voltage @ 25C)(Max)(mV)		1.5				1.5

Öko-Plan

	TLE2161ACD	TLE2161ACP	TLE2161AID	TLE2161AIDG4	TLE2161AIDR	TLE2161AIP
RoHS	Compliant	Not Compliant	Compliant	Compliant	Compliant	Not Compliant
Pb Free	No	No

Anwendungshinweise

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TLE2161 EMI Immunity Performance
PDF, 90 Kb, Datei veröffentlicht: Dec 31, 2013

Modellreihe

Serie: TLE2161A (6)

TLE2161ACD TLE2161ACP TLE2161AID TLE2161AIDG4 TLE2161AIDR TLE2161AIP

Herstellerklassifikation

Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> Precision Op Amps